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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W

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Shenzhen Res Electronics Limited
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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W

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Brand Name :original
Model Number :IRLML6401TRPBF
MOQ :discussible
Price :discussible
Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :10000 pcs per month
Delivery Time :1-7work days
Packaging Details :original
rated power :1.3 W
Drain-source resistance :0.05 Ω
polarity :P-Channel
Dissipated power :1.3 W
threshold voltage :550 mV
input capacitance :830 pF
pin number :3
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NEW AND ORIGNAL IRLML6401 N-Channel MOSFET SOT23-3 IRLML6401TRPBF

Products Description:

MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V

Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R

Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W
These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized devicedesign that HEXFET® power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device for use in battery andload management.A thermally enhanced large pad leadframe has been incorporated into thestandard SOT-23 package to produce a HEXFET Power MOSFET with theindustry's smallest footprint. This package, dubbed the Micro3™, is ideal forapplications where printed circuit board space is at a premium. The low profile(<1.1mm) of the Micro3 allows it to fit easily into extremely thin applicationenvironments such as portable electronics and PCMCIA cards. The thermalresistance and power dissipation are the best available

Technological Parameters:

Threshold voltage 550 mV
input capacitance 830 pF
Rated power 1.3 W
polarity P-Channel
Installation method Surface Mount
pin number 3
package SOT-23-3
Operating temperature -55℃ ~ 150℃ (TJ)
Packaging Tape & Reel (TR)
Manufacturing applications DC Switches

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