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Integrated Circuits 2N7002 Small Signal Field-Effect Transistors MOSFET N-CH 60V 115MA
Products Description:
2N7002 Transistor, MOSFET, N-Channel, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
High density cell design for extremely low RDS (ON).
High saturation current capability.
Voltage controlled small signal switch.
Rugged and reliable
These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,DMOS technology. These products have been designed tominimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be used in mostapplications requiring up to 400mA DC and can deliverpulsed currents up to 2A. These products are particularlysuited for low voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, and otherswitching applications.
Technological Parameters:
| Rated voltage (DC) | 60.0 V |
| Rated current | 115 mA |
| Rated power | 200 mW |
| pin number | 3 |
| Drain-source resistance | 1.2 Ω |
| Polar | N-Channel |
| Dissipated power | 200 mW |
| Threshold voltage | 2.1 V |
| Drain-source voltage (Vds) | 60 V |
| Gate-source breakdown voltage | ±20.0 V |