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Brand New Original Integrated Circuit IC Chip BSS138K IC Chip
Products Description:
N-Channel MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package
Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching.
Fairchild offers a large portfolio of MOSFET devices including high voltage (>250V) low voltage (<250V) types. Advanced silicon technology provides smaller die size, which is integrated into a variety of industry standard and thermally enhanced packages
Fairchild MOSFETs provide excellent design reliability by reducing voltage peaking and overshoot to reduce junction capacitance and reverse recovery charge, keeping systems up and running longer without additional external components
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only
Technological Parameters:
| Drain-source resistance | 1.6 Ω |
| Dissipated power | 0.35 W |
| Drain-Source Voltage (Vds) | 50 V |
| Input Capacitance (Ciss) | 58pF @25V(Vds) |
| Installation method | Surface Mount |
| package | SOT-23-3 |
| Packing | Tape & Reel (TR) |
| Manufacturing applications | power management |
| RoHS standard | RoHS Compliant |
| lead standard | Lead Free |